OpEnUV Simulation — EUV Lithography

Configure parameters on the right and click Run Simulation

Computing aerial image…

CD —nm

NILS —

Contrast —%

Reflectivity —%

Dose —mJ/cm²

NA 0.33

Coherence σ 0.8

Illumination

Period 64

CD target 32

Absorber Beliebiges Element H–U (z.B. Ta, W, Ni, Ru)

Bilayer pairs 50

Mo thickness 2.8 nm

Si thickness 4.1 nm

Gamma (Mo fraction) 0.40 When ≠ 0.40, gamma overrides Mo/Si thicknesses

Lin. Grading 0 nm

Parab. Grading 0 nm

Roughness σ 0 nm

Resist Model Full chem requires tuned params; use aerial for quick scans

Threshold (norm) 0.50 Normalised intensity threshold for aerial_threshold model

Dose 20 mJ/cm²

Focus 0 nm

Resist thickness 30 nm